A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials.
A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned.
A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer.
The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.
An imagable material typically photoresist is provided over a mass which is ultimately to be patterned. Portions of the imagable material are then exposed to radiation, while other portions remain unexposed in the case of photoresist, the radiation is light. After the exposure, the material is subjected to conditions which selectively remove either the portions of the exposed to radiation, or the portions which were not exposed to radiation.
If the imagable material comprises photoresist and the portions exposed to radiation are removed, the photoresist is referred to as a positive photoresist, whereas if the portions which are not exposed to radiation are removed the photoresist is referred to as a negative photoresist.
Once the imagable material is patterned, it is utilized as a masking layer for patterning the underlying mass.
Specifically, the patterned imagable material covers some portions of the mass, while leaving other portions exposed to an etch which Mitel semiconducter case the exposed portions.
Accordingly, the mass remaining after the etch is in approximately the same pattern as Mitel semiconducter case patterned imagable material formed over the mass.
However, problems can occur during the utilization of photolithographic processing for patterning silicon nitride. Specifically, the pattern formed in silicon nitride is frequently not the same as the pattern which was intended to be formed in the photoresist.
Such problem can be particularly severe when utilizing photoresist patterned with deep UV light processing, wherein deep UV light is defined as ultraviolet light having a wavelength of less than or equal to nanometers. It would be desirable to develop methods for avoiding the above-discussed problems.
A second material is formed over the first material, and the second material comprises silicon and less nitrogen by atom percent than the first material.
A first layer comprising silicon and nitrogen is formed over a substrate. A sacrificial layer is formed on the first layer, and comprises less nitrogen by atom percent than the first layer.
A layer of imagable material is formed on the sacrificial layer and patterned. The patterned structure has a pair of opposing sidewalls extending upwardly from the substrate. A pair of opposing corners are defined where the sidewalls join the substrate.
The opposing corners are closer to one another than they would be if the sacrificial layer was absent and the imagable material was on the first layer during the patterning of the imagable material. The sacrificial layer is removed from the patterned structure.
Fragment 10 comprises a substrate 12 having an upper surface Substrate 12 can comprise, for example, monocrystalline silicon. Layers  16, 18, 20, 22 and 24 are formed over upper surface 15, and are ultimately to be patterned into a wordline.
Accordingly, layer 16 comprises silicon dioxide, layer 18 comprises conductively doped silicon i. Layer 22 has an upper surface 23, and layer 24 is formed on i. Layer 24 comprises an imagable material, and is described herein to comprise photoresist. Such patterning can comprise, for example, exposing portions of the photoresist to radiation while leaving other portions unexposed, and subsequently selectively removing either the exposed or unexposed portions with a solvent.
Blocks  26 comprise sidewalls 28 which are preferably substantially perpendicular to upper surface 23 of silicon nitride layer However, a problem which occurs during the patterning of photoresist 24 is that photoresist adjacent blocks 26 does not remove as well as photoresist which is further removed from blocks Such results in the formation of foot portions 30 at locations where sidewalls 28 join upper surface 23 of silicon nitride layer Wordline stacks 40 comprise sidewalls 41 which are substantially perpendicular to upper surface 15 of substrate As shown, foot portions  30 FIG.
Foot portions 30 cause laterally extending portions 42 because the photoresist of foot portions 30 is etched by the conditions which etch layers 16, 18, 20 and 22, and is ultimately removed to allow portions of layers 16, 18, 20 and 22 beneath foot regions 30 to be removed.
However, the portions of layers 16, 18, 20 and 22 beneath foot regions 30 are exposed to etching conditions for less time than are portions of layers 16, 18, 20 and 22 that are not beneath foot portions Accordingly, the portions beneath foot portions 30 are etched less than are portions of layers 16, 18, 20 and 22 not beneath foot portions 30, causing formation of laterally extending portions The laterally extending portions 42 extend into a gap between adjacent wordline stacks 40, and thus can affect a critical dimension of a structure such as a conductive plug or capacitor subsequently formed between stacks Sidewalls  41 join upper surface 15 of substrate 12 at a pair of opposing corners 43 relative to one of stacks 40, and a pair of opposing corners 45 relative to another of stacks In many applications it would be desirable if the opposing corners relative to a particular stack were as close together as possible after the patterning of layers 16, 18, 20 and However, laterally extending portions 42 extend a distance between the opposing corners 43, and likewise extend a distance between opposing corners Каталог импортного промышленного оборудования.
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The segment is relatively small when compared to the semiconductor market as a whole but the segment is experiencing high levels of growth over the next five years. Management Mitel Semiconductors Ivey Business Case Nick Weller, Brin Conner, Joshua Goldsmith, Brian Gregory 2/14/ 1 Mitel Semiconductors Mitel Semiconductors is a division of Mitel Corporation.